Infineon marks innovation milestone with world’s first 300-millimeter power silicon carbide (SiC) wafer
PBusiness & Financial Press
Nov 09, 2026
Infineon presents industry-first functional power devices processed on 300-millimeter silicon carbide wafers
Technological breakthrough underlines Infineon’s innovation strength and leadership in power semiconductors and wide-bandgap technologies
300-millimeter SiC process feasibility lays the foundation for secure, future-proof SiC supply to customers in automotive, renewable energy, industrial and AI data center applications
Infineon will present the first processed 300-millimeter SiC wafer to the public at the electronica trade show starting 10 November 2026 in Munich
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Infineon marks innovation milestone with world’s first 300-millimeter power silicon carbide (SiC) wafer
PBusiness & Financial Press Nov 09, 2026
Infineon presents industry-first functional power devices processed on 300-millimeter silicon carbide wafers
Technological breakthrough underlines Infineon’s innovation strength and leadership in power semiconductors and wide-bandgap technologies
300-millimeter SiC process feasibility lays the foundation for secure, future-proof SiC supply to customers in automotive, renewable energy, industrial and AI data center applications
Infineon will present the first processed 300-millimeter SiC wafer to the public at the electronica trade show starting 10 November 2026 in Munich